FCB20N60F-F085

制造商: ONSEMI

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道 MOSFET 600V,20A,190mΩ,

物料参数

状态:已停产
Compliance:Pb A H P
Channel Polarity:N-Channel
Silicon Family:PowerTrench® T1
Package Name:NA
Type:High Voltage
Gate Level:Standard
Wide SOA Mosfets:0
Configuration:Single
OPN in older Technology:0
V(BR)DSS Min (V):600
RDS(on) Max @ VGS = 10 V (mΩ):190
VGS Max (V):±30
Vgs(th) Max (V):5
ID Max (A):20
PD Max (W):405
RDS(on) Max @ VGS = 2.5 V (mΩ):-
RDS(on) Max @ VGS = 4.5 V (mΩ):-
Qg Typ @ VGS = 4.5 V (nC):-
Qg Typ @ VGS = 10 V (nC):78
Ciss Typ (pF):2305
Qgd Typ @ VGS = 4.5 V (nC):41.5
Qrr Typ (nC):1285
Coss Typ (pF):1310
Crss Typ (pF):105
Package Type:D2PAK-3 / TO-263-2
MSL Type:1
MSL Temp (°C):245
ON Target:No
参考价格:Price N/A
Flip Electronics
库存数量:800
1: ¥17.7760